Part Number Hot Search : 
C20DT 10R0J M2100 NDB610AE AC110 1H222 599MWO4C 15Q7Q
Product Description
Full Text Search
 

To Download MMT10B230T3-D Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  ? semiconductor components industries, llc, 2001 march, 2001 rev. 5 1 publication order number: mmt10b230t3/d mmt10b230t3, mmt10b260t3, mmt10b310t3 preferred device thyristor surge protectors high voltage bidirectional tspd these thyristor surge protective devices (tspd) prevent overvoltage damage to sensitive circuits by lightning, induction and power line crossings. they are breakovertriggered crowbar protectors. turnoff occurs when the surge current falls below the holding current value. secondary protection applications for electronic telecom equipment at customer premises. ? outstanding high surge current capability: 100 amps 10x1000 m sec guaranteed at the extended temp range of 20 c to 65 c ? the mmt10b230t3 series is used to help equipment meet various regulatory requirements including: bellcore 1089, itu k.20 & k.21, iec 950, ul 1459 & 1950 and fcc part 68. ? bidirectional protection in a single device ? little change of voltage limit with transient amplitude or rate ? freedom from wearout mechanisms present in nonsemiconductor devices ? failsafe, shorts when overstressed, preventing continued unprotected operation. ? surface mount technology (smt) ? complies with gr1089 second level surge spec at 500 amps 2x10 m sec waveforms ? indicates ul registered file #e116110 ? device marking: mmt10b230t3: rpdf; mmt10b260t3: rpdg; mmt10b310t3: rpdj, and date code maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit offstate voltage maximum mmt10b230t3 mmt10b260t3 mmt10b310t3 v dm  170  200  270 volts maximum pulse surge short circuit current nonrepetitive double exponential decay waveform (notes 1. and 2.) 10 x 1000 m sec (20 c to +65 c) 2 x 10 m sec 10 x 700 m sec i pps1 i pps2 i pps3  100  500  180 a(pk) maximum nonrepetitive rate of change of onstate current double exponential waveform, r = 2.0, l = 1.5 m h, c = 1.67 m f, i pk = 110a di/dt  100 a/ m s 1. allow cooling before testing second polarity. 2. measured under pulse conditions to reduce heating. bidirectional tspd 100 amp surge 265 thru 365 volts preferred devices are recommended choices for future use and best overall value. device package shipping ordering information mmt10b230t3 smb 12mm tape and reel (2.5k/reel) mmt10b260t3 smb http://onsemi.com 12mm tape and reel (2.5k/reel) mmt10b310t3 smb 12mm tape and reel (2.5k/reel) mt1 mt2 smb (no polarity) (essentially jedec do214aa) case 403c () rpdx = specific device code x = f, g or j y = year ww = work week marking diagrams yww rpdx
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 2 thermal characteristics characteristic symbol max unit operating temperature range blocking or conducting state t j1 40 to +125 c overload junction temperature maximum conducting state only t j2 +175 c instantaneous peak power dissipation (i pk = 100 a, 10x1000 m sec @ 25 c) p pk 4000 w maximum lead temperature for soldering purposes 1/8 from case for 10 seconds t l 260 c electrical characteristics (t j = 25 c unless otherwise noted) devices are bidirectional. all electrical parameters apply to forward and reverse polarities. characteristic symbol min typ max unit breakover voltage (both polarities) (dv/dt = 100 v/ m s, i sc = 1.0 a, vdc = 1000 v) mmt10b230t3 mmt10b260t3 mmt10b310t3 (+65 c) mmt10b230t3 mmt10b260t3 mmt10b310t3 v (bo) 265 320 365 290 340 400 volts breakover voltage (both polarities) (f = 60 hz, i sc = 1.0 a(rms), v oc = 1000 v(rms), mmt10b230t3 r i = 1.0 k w , t = 0.5 cycle) (note 3.) mmt10b260t3 mmt10b310t3 (+65 c) mmt10b230t3 mmt10b260t3 mmt10b310t3 v (bo) 265 320 365 290 340 400 volts breakover voltage temperature coefficient dv (bo) /dt j 0.08 %/ c breakdown voltage (i (br) = 1.0 ma) both polarities mmt10b230t3 mmt10b260t3 mmt10b310t3 v (br) 190 240 280 volts off state current (v d1 = 50 v) both polarities off state current (v d2 = v dm ) both polarities i d1 i d2 2.0 5.0 m a onstate voltage (i t = 1.0 a) (pw 300 m s, duty cycle 2%) (note 3.) v t 1.53 5.0 volts breakover current (f = 60 hz, v dm = 1000 v(rms), r s = 1.0 k w ) both polarities i bo 260 ma holding current (both polarities) (note 3.) v s = 500 volts; i t (initiating current) =  1.0 a (+65 c) i h 175 130 270 ma critical rate of rise of offstate voltage (linear waveform, v d = rated v br , t j = 25 c) dv/dt 2000 v/ m s capacitance (f = 1.0 mhz, 50 vdc, 1.0 v rms signal) capacitance (f = 1.0 mhz, 2.0 vdc, 15 mv rms signal) c o 65 160 200 pf 3. measured under pulse conditions to reduce heating.
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 3 + current + voltage v tm v (bo) i (bo) i d2 i d1 v d1 v d2 v (br) i h symbol parameter i d1 , i d2 off state leakage current v d1 , v d2 off state blocking voltage v br breakdown voltage v bo breakover voltage i bo breakover current i h holding current v tm on state voltage voltage current characteristic of tspd (bidirectional device)
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 4 figure 1. offstate current versus temperature temperature ( c) 140 120 100 80 60 40 20 0 100 10 1 0.1 0.01 i d1 , off-state current ( a) figure 2. breakdown voltage versus temperature temperature ( c) v br , breakdown voltage (volts) figure 3. breakover voltage versus temperature figure 4. holding current versus temperature temperature ( c) 1000 100 50 0 -50 125 v d1 = 50v 100 200 300 400 500 600 700 800 900 i h , holding current (ma) v bo , breakover voltage (volts) 100 50 0 -50 125 340 320 300 280 260 240 220 200 180 160 mmt10b230t3 mmt10b260t3 mmt10b310t3 temperature ( c) 100 50 0 -50 125 360 340 320 300 280 260 240 220 200 180 mmt10b230t3 mmt10b260t3 mmt10b310t3 m figure 5. exponential decay pulse waveform time (  s) 0 50 0 ipp - peak pulse current - %ipp 100 t r = rise time to peak value t f = decay time to half value t r t f peak value half value -25 25 75 -25 25 75 -25 25 75 time (sec) 100 10 0.1 0.01 100 10 1 current (a) figure 6. peak surge onstate current versus surge current duration, sinusoidal waveform 1
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 5 telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd telecom equipment outside plant tip ring gnd pptc* pptc* heat coil heat coil *polymeric ptc (positive temperature coefficient) overcurrent protection device
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 6 minimum recommended footprint for surface mounted applications surface mount board layout is a critical portion of the total design. the footprint for the semiconductor packages must be the correct size to insure proper solder connection interface between the board and the package. with the correct pad geometry, the packages will self align when subjected to a solder reflow process. smb 0.085 2.159 0.108 2.743 0.089 2.261 mm inches package dimensions a s d b j p k c h notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. d dimension shall be measured within dimension p. dim min max min max millimeters inches a 0.160 0.180 4.06 4.57 b 0.130 0.150 3.30 3.81 c 0.075 0.095 1.90 2.41 d 0.077 0.083 1.96 2.11 h 0.0020 0.0060 0.051 0.152 j 0.006 0.012 0.15 0.30 k 0.030 0.050 0.76 1.27 p 0.020 ref 0.51 ref s 0.205 0.220 5.21 5.59 smb (no polarity) (essentially jedec do214aa) case 403c01 issue o
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 7 notes
mmt10b230t3, mmt10b260t3, mmt10b310t3 http://onsemi.com 8 on semiconductor and are trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. atypicalo parameters which may be provided in scill c data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including atypicalso must be validated for each customer application by customer's technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body , or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. publication ordering information central/south america: spanish phone : 3033087143 (monfri 8:00am to 5:00pm mst) email : onlitspanish@hibbertco.com tollfree from mexico: dial 018002882872 for access then dial 8662979322 asia/pacific : ldc for on semiconductor asia support phone : 3036752121 (tuefri 9:00am to 1:00pm, hong kong time) toll free from hong kong & singapore: 00180044223781 email : onlitasia@hibbertco.com japan : on semiconductor, japan customer focus center 4321 nishigotanda, shinagawaku, tokyo, japan 1410031 phone : 81357402700 email : r14525@onsemi.com on semiconductor website : http://onsemi.com for additional information, please contact your local sales representative. mmt10b230t3/d north america literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 3036752175 or 8003443860 toll free usa/canada fax : 3036752176 or 8003443867 toll free usa/canada email : onlit@hibbertco.com fax response line: 3036752167 or 8003443810 toll free usa/canada n. american technical support : 8002829855 toll free usa/canada europe: ldc for on semiconductor european support german phone : (+1) 3033087140 (monfri 2:30pm to 7:00pm cet) email : onlitgerman@hibbertco.com french phone : (+1) 3033087141 (monfri 2:00pm to 7:00pm cet) email : onlitfrench@hibbertco.com english phone : (+1) 3033087142 (monfri 12:00pm to 5:00pm gmt) email : onlit@hibbertco.com european tollfree access*: 0080044223781 *available from germany, france, italy, uk, ireland


▲Up To Search▲   

 
Price & Availability of MMT10B230T3-D

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X